IS63LV1024
IS63LV1024L
128K x 8 HIGH-SPEED CMOS STATIC RAM
3.3V REVOLUTIONARY PINOUT
FEATURES
• High-speed access times:
8, 10, 12 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with
CE
and
OE
options
•
CE
power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 3.3V power supply
• Packages available:
– 32-pin 300-mil SOJ
– 32-pin 400-mil SOJ
– 32-pin TSOP (Type II)
– 32-pin STSOP (Type I)
– 36-pin BGA (8mmx10mm)
• Lead-free Available
JANUARY 2007
DESCRIPTION
The
ISSI
IS63LV1024/IS63LV1024L is a very high-speed,
low power, 131,072-word by 8-bit CMOS static RAM in
revolutionary pinout. The IS63LV1024/IS63LV1024L is fab-
ricated using
ISSI
's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit
design techniques, yields higher performance and low
power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 µW (typical) with CMOS input levels.
The IS63LV1024/IS63LV1024L operates from a single 3.3V
power supply and all inputs are TTL-compatible.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K X 8
MEMORY ARRAY
VDD
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. I
1/26/07
1
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
