Infineon's StrongIRFET™ 2 power MOSFET 60 V features lowest RDS(on) of 1.05 mOhm, addressing a broad range of applications from low- to high-switching frequency.
EasyBRIDGE 1 2200 V, 50 A Diode Bridge Module with 1700 V TRENCHSTOP™ IGBT4 Brake Chopper, PressFIT contact technology and pre-applied Thermal Interface Material. The DDB6U50N22W1RP_B11 extends the current easy drive rectifier diode portfolio up to 2.2 kV.
Infineon’s OptiMOS™ 5 80V n-channel power MOSFET IPT019N08N5 in TO-Leadless package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. With a 60% space reduction compared to D2PAK 7pin package, TO-Leadless (TOLL) is the perfect solution where highest efficiency, outstanding EMI behavior as well as best thermal behavior and space reduction are required.