DS 17
DSA 17
DSI 17
DSAI 17
Rectifier Diode
Avalanche Diode
V
RRM
= 800-1800 V
I
F(RMS)
= 40 A
I
F(AV)M
= 25 A
V
RSM
V
900
1300
1300
1700
1900
V
(BR)min
ÿ
x
V
RRM
V
-
-
1300
1750
1950
V
800
1200
1200
1600
1800
Anode
on stud
DS 17-08A
DS 17-12A
DSA 17-12A
DSA 17-16A
DSA 17-18A
Cathode
on stud
DSI 17-08A
DSI 17-12A
DSAI 17-12A
DSAI 17-16A
DSAI 17-18A
DO-203 AA
C
A
DS
DSA
A
C
DSI
DSAI
x
Only for Avalanche Diodes
A = Anode
10-32UNF
C = Cathode
Symbol
I
F(RMS)
I
F(AV)M
P
RSM
I
FSM
Test Conditions
T
VJ
= T
VJM
T
case
= 125°C; 180° sine
DSA(I) types, T
VJ
= T
VJM
, t
p
= 10
ms
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
40
25
7
370
400
300
320
680
660
450
430
-40...+180
180
-40...+180
A
A
kW
A
A
A
A
As
A
2
s
A
2
s
A
2
s
°C
°C
°C
Nm
lb.in.
g
2
Features
International standard package,
JEDEC DO-203 AA (DO-4)
Planar glassivated chips
q
q
It
2
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
Applications
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
q
q
q
q
q
q
q
T
VJ
T
VJM
T
stg
M
d
Weight
Mounting torque
q
2.2-2.8
19-25
6
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Symbol
I
R
V
F
V
T0
r
T
R
thJC
R
thJH
d
S
d
A
a
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
I
F
= 55 A; T
VJ
= 25°C
Characteristic Values
£
£
4
1.36
0.85
8
1.5
2.1
2.05
2.05
100
mA
V
V
mW
K/W
K/W
mm
mm
m/s
2
For power-loss calculations only
T
VJ
= T
VJM
DC current
DC current
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1-2
IXYS [ IXYS CORPORATION ]
