Fast Recovery
Epitaxial Diode (FRED)
DSEI 120
I
FAVM
= 126 A
V
RRM
= 600 V
t
rr
= 35 ns
V
RSM
V
600
V
RRM
V
600
Type
A
C
TO-247 AD
C
DSEI 120-06A
A
C
A = Anode, C = Cathode
Symbol
I
FRMS
I
FAVM
ÿÿ
x
I
FAV
y
I
FRM
I
FSM
Test Conditions
T
VJ
= T
VJM
T
C
= 70°C; rectangular, d = 0.5
T
C
= 110°C; rectangular, d = 0.5
t
P
< 10
ms;
rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
100
126
77
tbd
600
660
540
600
1800
1800
1450
1500
-40...+150
150
-40...+150
A
A
A
A
A
A
A
A
A
2
s
A
2
s
As
A
2
s
°C
°C
°C
W
2
Features
q
q
q
q
q
q
q
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
I
2
t
T
VJ
= 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
International standard package
JEDEC TO-247 AD
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
q
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
T
C
= 25°C
Mounting torque
q
q
q
357
0.8...1.2
6
q
Nm
g
q
q
q
Symbol
Test Conditions
Characteristic Values
typ.
max.
3
0.75
20
1.12
1.3
0.85
3.5
0.35
0.25
35
mA
mA
mA
V
V
V
mW
K/W
K/W
K/W
ns
A
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
I
R
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 70 A;
V
R
= V
RRM
V
R
= 0.8 • V
RRM
V
R
= 0.8 • V
RRM
T
VJ
= 150°C
T
VJ
= 25°C
Advantages
q
q
V
F
V
T0
r
T
R
thJC
R
thCK
R
thJA
t
rr
I
RM
q
q
For power-loss calculations only
T
VJ
= T
VJM
q
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
Dimensions
See DSEI 60-12 page D5 - 27
I
F
= 1 A; -di/dt = 200 A/ms; V
R
= 30 V; T
VJ
= 25°C
V
R
= 350 V; I
F
= 80 A; -di
F
/dt = 200 A/ms
L
£
0.05
mH;
T
VJ
= 100°C
35
17
50
21
x
Chip capability,
y
limited to 70 A by leads
028
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1-2
IXYS [ IXYS CORPORATION ]
