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DSEI20-12A 参数 Datasheet PDF下载

DSEI20-12A图片预览
型号: DSEI20-12A
PDF下载: 下载PDF文件 查看货源
内容描述: 快速恢复外延二极管 [Fast Recovery Epitaxial Diode]
分类和应用: 整流二极管局域网快速恢复二极管
文件页数/大小: 2 页 / 77 K
品牌: IXYS [ IXYS CORPORATION ]
 浏览型号DSEI20-12A的Datasheet PDF文件第2页  
DSEI 20-12A
I
FAVM
=
17 A
40 ns
Fast Recovery Epitaxial Diode
(FRED)
V
RSM
1200V
V
RRM
1200V
Type
DSEI 20-12A
A
C
V
RRM
= 1200 V
t
rr
=
TO-220 AC
Maximum Ratings
70
17
220
130
140
110
120
85
80
60
60
-40...+150
150
-40...+150
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
°C
°C
°C
W
Features
Low I
RM
-values
Planar passivated chips
Very short recovery time
Soft recovery behaviour
Epoxy meet UL 94V-0.
Extremely low switching losses
International standard package
JEDEC TO-220 AC
q
q
q
q
q
q
q
Symbol
I
FRMS
I
FAVM
x
I
FRM
I
FSM
Test Conditions
T
VJ
= T
VJM
T
C
= 85°C; rectangular, d = 0.5
t
P
< 10
µs;
rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C
T
VJ
= 150°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
C
C
A
A = Anode
C = Cathode
i
2
dt
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
T
C
= 25°C
Mounting torque with screw M3
Mounting torque with screw M3.5
78
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
2
g
q
Symbol
I
R
Test Conditions
V
R
= V
RRM
V
R
= 0.8 V
RRM
V
R
= 0.8 V
RRM
I
F
= 12 A
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 150°C
T
VJ
= 25°C
Characteristic Values
Typ.
Max.
750
250
7
1.87
2.15
1.65
18.2
0.5
µA
µA
mA
V
V
V
mΩ
q
q
q
q
V
F
V
T0
r
T
R
thJC
R
thCK
R
thJA
t
rr
I
RM
q
q
q
For power-loss calculations only
T
VJ
= T
VJM
Applications
Snubber diode
Anti saturation diode
Inductive heating and melting
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Antiparallel diode for high frequency
switching devices
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Low losses
Low noise switching
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Operating at lower temperature or
space saving by reduced cooling
1.6 K/W
K/W
60 K/W
60
ns
A
q
q
q
q
I
F
= 1 A; -di/dt = 100 A/µs; V
R
= 30 V; T
VJ
= 25°C
40
7
V
R
= 540 V; I
F
= 20 A; -di
F
/dt = 100 A/µs
L
0.05
µH
T
VJ
= 100°C
q
x
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to DIN/IEC 747
©1996 IXYS Corporation. All rights reserved.
IXYS Corporation
3540 Bassett Street, Santa Clara, CA 95054
Phone: (408) 982-0700 Fax: 408-496-0670
96501 (7/96)
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim, Germany
Phone: +49-6206-5030 Fax: +49-6206-503627