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DSEP29-06A 参数 Datasheet PDF下载

DSEP29-06A图片预览
型号: DSEP29-06A
PDF下载: 下载PDF文件 查看货源
内容描述: HiPerFREDTM外延二极管具有软恢复 [HiPerFREDTM Epitaxial Diode with soft recovery]
分类和应用: 整流二极管局域网软恢复二极管
文件页数/大小: 3 页 / 68 K
品牌: IXYS [ IXYS CORPORATION ]
 浏览型号DSEP29-06A的Datasheet PDF文件第2页浏览型号DSEP29-06A的Datasheet PDF文件第3页  
DSEP 29-06A DSEP 29-06AS
DSEP 29-06B
HiPerFRED
TM
Epitaxial Diode
with soft recovery
I
FAV
= 30 A
V
RRM
= 600 V
t
rr
= 30/35 ns
A
C
V
RSM
V
600
600
600
V
RRM
V
600
600
600
Type
TO-220 AC
C
DSEP 29-06A
DSEP 29-06AS
DSEP 29-06B
A
C (TAB)
TO-263
A
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
Conditions
rect., d = 0.5; T
C
(Version A, AS)
= 135°C
T
C
(Version B)
= 125°C
Maximum Ratings
35
30
30
250
200
0.2
0.1
-55...+175
175
-55...+150
A
A
A
A
A
mJ
A
°C
°C
°C
W
Nm
g
Features
l
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine;
(Version A, AS)
(Version B)
T
VJ
= 25°C; non-repetitive
I
AS
= 1.3 A; L = 180 µH
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
• Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
T
C
= 25°C
mounting torque
(Version A, B)
typical
165
0.4...0.6
2
Symbol
I
R
Conditions
T
VJ
= 25°C; V
R
= V
RRM
T
VJ
= 150°C; V
R
= V
RRM
I
F
= 30 A;
T
VJ
= 150°C
T
VJ
= 25°C
Characteristic max. Values
Version A
Version B
250
1
1.26
1.61
0.9
0.5
35
6
250
2
1.58
2.52
0.9
0.5
30
4
µA
mA
V
V
K/W
K/W
ns
A
V
F
R
thJC
R
thCH
t
rr
I
RM
typ.
typ.
typ.
I
F
= 1 A; -di/dt = 200 A/µs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 50 A;
-di
F
/dt = 100 A/µs; T
VJ
= 100°C
Dimensions see Outlines.pdf
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
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