DSEP 30-12A
DSEP 30-12AR
HiPerFRED
TM
Epitaxial Diode
with soft recovery
I
FAV
= 30 A
V
RRM
= 1200 V
t
rr
= 40 ns
V
RSM
V
1200
1200
V
RRM
V
1200
1200
Type
A
C
TO-247 AD
Version A
ISOPLUS 247
TM
Version AR
DSEP 30-12A
DSEP 30-12AR
C
A
C (TAB)
C
A
TAB
A = Anode, C = Cathode
Symbol
I
FRMS
I
FAVM
Conditions
rectangular, d = 0.5; T
C
(Vers. A) = 115°C
T
C
(Vers. AR)= 105°C
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 11.5 A; L = 180 µH
V
A
= 1.25·V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
70
30
A
A
Features
200
14
1.2
-55...+175
175
-55...+150
A
mJ
A
°C
°C
°C
W
W
Nm
N
V~
g
q
q
q
q
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
*
F
C
V
ISOL
**
Weight
q
q
q
q
T
C
= 25°C; Version A
Version AR
mounting torque
mounting force with clip
50/60 Hz RMS; I
ISOL
£
1 mA; leads-to-tab
typical
165
135
0.8...1.2
20...120
2500
6
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Version ..R isolated and
UL registered E153432
Applications
q
q
q
q
* Version A only; ** Version AR only
Symbol
I
R
x
Conditions
T
VJ
= 25°C; V
R
= V
RRM
T
VJ
= 150°C; V
R
= V
RRM
I
F
= 30 A;
Version A
Version AR
T
VJ
= 150°C
T
VJ
= 25°C
Characteristic Values
typ.
max.
250
1
1.78
2.74
0.9
1.1
0.25
40
5.5
11.4
µA
mA
V
V
K/W
K/W
K/W
ns
A
q
q
q
q
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
V
F
y
R
thJC
R
thCH
t
rr
I
RM
Advantages
q
I
F
= 1 A; -di/dt = 200 A/µs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/µs
T
VJ
= 100°C
q
q
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300
ms,
Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
018
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-2
IXYS [ IXYS CORPORATION ]
