DSEP 8-06B
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Preliminary Data
V
RSM
V
600
V
RRM
V
Type
A
C
I
FAV
= 10 A
V
RRM
= 600 V
t
rr
= 30 ns
TO-220 AC
C
600
DSEP 8-06B
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
Conditions
T
C
= 125°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 0.9 A; L = 180 µH
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
35
10
50
0.1
0.1
-55...+175
175
-55...+150
A
A
Features
A
q
mJ
A
°C
°C
°C
W
Nm
g
q
q
q
q
q
q
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
T
C
= 25°C
mounting torque
typical
60
0.4...0.6
2
Applications
q
q
q
Symbol
I
R
x
Conditions
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 150°C V
R
= V
RRM
I
F
= 10 A;
T
VJ
= 150°C
T
VJ
= 25°C
Characteristic Values
typ.
max.
60
0.25
1.66
2.66
2.5
0.5
µA
mA
V
V
K/W
K/W
ns
q
q
q
q
q
V
F
y
R
thJC
R
thCH
t
rr
I
RM
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
q
I
F
= 1 A; -di/dt = 50 A/µs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 12 A; -di
F
/dt = 100 A/µs
T
VJ
= 100°C
30
2.4
A
q
q
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300
ms,
Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
Dimensions see outlines.pdf
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1-1
230
IXYS reserves the right to change limits, test conditions and dimensions.
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