DSI 45
70
A
60
I
F
50
40
30
20
100
10
0
0.0
0
0.001
10
2
0.01
0.1
t
s
1
1
2
3
4 5 6 7 8 910
ms
t
500
A
50Hz, 80% V
RRM
10
4
As
I
2
t
2
V
R
= 0 V
T
VJ
=150°C
T
VJ
= 25°C
400
I
FSM
T
VJ
= 45°C
300
10
3
200
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 150°C
0.4
0.8
V
F
1.2 V
1.6
Fig. 1 Forward current versus voltage
drop per diode
100
W
80
P
tot
60
Fig. 2 Surge overload current
Fig. 3 I
2
t versus time per diode
50
R
thHA
:
0.5 K/W
1.0 K/W
1.5K/W
2.0 K/W
3.0 K/W
4.0 K/W
6.0 K/W
A
40
I
F(AV)M
30
40
20
20
10
0
0
10
20
30
I
d(AV)M
40
A
0
20
40
60
80 100 120 140 °C
T
amb
0
0
20 40 60 80 100 120 140 °C
T
C
Fig. 4
0.6
Power dissipation versus direct output current and ambient temperature, sine 180°
Fig. 5 Max. forward current versus
case temperature
K/W
Z
thJC
0.4
Constants for Z
thJC
calculation:
0.2
i
1
2
3
4
R
thi
(K/W)
0.1633
0.2517
0.0933
0.04167
t
i
(s)
0.016
0.118
0.588
2.6
0.0
0.001
DSI45
0.01
0.1
1
t
s
10
Fig. 6 Transient thermal impedance junction to case
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IXYS [ IXYS CORPORATION ]
