MegaMOS
TM
FET
IRFP 360
V
DSS
= 400 V
= 23 A
I
D25
R
DS(on)
= 0.20
Ω
N-Channel Enhancement Mode
Preliminary data
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D100
I
DM
I
AR
E
AR
dv/dt
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1.0 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
I
S
≤
I
DM
, di/dt
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum Ratings
400
400
±20
±30
23
14
92
23
30
5
V
V
V
V
A
A
A
A
mJ
V/ns
D (TAB)
TO-247 AD
G = Gate,
S = Source,
D = Drain,
TAB = Drain
P
D
T
J
T
JM
T
stg
M
d
Weight
300
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
Nm/lb.in.
g
°C
Features
•
•
•
•
•
Mounting torque
1.13/10
6
300
Max lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Fast switching times
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
High commuting dv/dt rating
Applications
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
400
2
4
±100
T
J
= 25°C
T
J
= 125°C
25
250
0.20
V
V
nA
µA
µA
Ω
Advantages
•
•
•
•
•
•
•
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
,
I
D
= 250 µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 14A
Pulse test, t
≤
300 µs, duty cycle d
≤
2%
DC choppers
Motor Controls
Switch-mode and resonant-mode
Uninterruptable power supplies (UPS)
Space savings
High power density
Easy to mount with 1 screw (isolated
mounting screw hole)
This data reflects the objective technical specification and characterization data from engineering lots.
IXYS reserves the right to change limits, test conditions, and dimensions.
95509A (4/95)
© 2000 IXYS All rights reserved
1-2
IXYS [ IXYS CORPORATION ]
