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IXBH16N170A 参数 Datasheet PDF下载

IXBH16N170A图片预览
型号: IXBH16N170A
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压,高增益BIMOSFET单片双极型晶体管MOS [High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor]
分类和应用: 晶体双极型晶体管
文件页数/大小: 2 页 / 54 K
品牌: IXYS [ IXYS CORPORATION ]
 浏览型号IXBH16N170A的Datasheet PDF文件第2页  
Advanced Technical Information
High Voltage, High Gain
BIMOSFET
TM
Monolithic
Bipolar MOS Transistor
IXBH 16N170A
IXBT 16N170A
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 1700 V
= 16 A
= 6.0 V
= 50 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 33
W
Clamped inductive load
V
GE
= 15 V, V
CES
= 1200V, T
J
= 125°C
R
G
= 33
W
non repetitive
T
C
= 25°C
Maximum Ratings
1700
1700
±20
±30
16
10
40
I
CM
=
V
CES
=
40
1350
10
150
-55 ... +150
150
-55 ... +150
300
260
V
V
V
V
A
A
A
A
V
ms
W
°C
°C
°C
°C
°C
g
g
TO-268
(IXBT)
G
E
TO-247 AD (IXBH)
G
C (TAB)
C
E
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
Features
• Monolithic fast reverse diode
• High Blocking Voltage
• JEDEC TO-268 surface mount and
JEDEC TO-247 AD packages
• Low switching losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Molding epoxies meet UL 94 V-0
flammability classification
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering SMD devices for 10 s
M
d
Weight
Mounting torque (M3) (TO-247)
TO-247
TO-268
1.13/10 Nm/lb.in.
6
4
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1700
2.5
T
J
= 125°C
V
V
mA
mA
nA
V
V
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• Capacitor discharge circuits
Advantages
Lower conduction losses than MOSFETs
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
mA,
V
GE
= 0 V
= 250
mA,
V
CE
= V
GE
5.5
50
1.5
±100
6.0
V
CE
= 0.8 V
CES
V
GE
= 0 V; Note 1
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
Note 2
T
J
= 125°C
5.0
IXYS reserves the right to change limits, test conditions, and dimensions.
98707 (02/23/00)
© 2000 IXYS All rights reserved
1-2