High Voltage, High Gain
BIMOSFET
TM
Monolithic
Bipolar MOS Transistor
IXBH 42N170
IXBT 42N170
V
CES
= 1700 V
= 75 A
I
C25
V
CE(sat)
= 3.6
V
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Ω
Clamped inductive load
V
GE
= 15 V, V
CES
= 1200V, T
J
= 125°C
R
G
= 10
Ω
non repetitive
T
C
= 25°C
Maximum Ratings
1700
1700
±20
±30
75
42
180
I
CM
=
V
CES
=
90
1350
10
360
-55 ... +150
150
-55 ... +150
350
260
6
4
V
V
V
V
A
A
A
A
V
µs
W
°C
°C
°C
°C
°C
g
g
TO-268 (IXBT)
G
E
(TAB)
TO-247 AD
(IXBH)
G
C (TAB)
C
E
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
M
d
Weight
Mounting torque (M3)
TO-247 AD
TO-268
1.13/10Nm/lb.in.
Features
High Blocking Voltage
JEDEC TO-268 surface and
JEDEC TO-247 AD
Low conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Molding epoxies meet UL 94 V-0
flammability classification
Applications
AC motor speed control
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Capacitor discharge circuits
Advantages
Lower conduction losses than MOSFETs
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1700
2.5
T
J
= 25°C
T
J
= 125°C
5.5
50
1.5
±100
3.6
T
J
= 125°C
3.7
V
V
µA
mA
nA
V
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
µA,
V
GE
= 0 V
= 750
µA,
V
CE
= V
GE
V
CE
= 0.8 V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
© 2004 IXYS All rights reserve
DS98710B(12/04)
IXYS [ IXYS CORPORATION ]
