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IXBH9N160G 参数 Datasheet PDF下载

IXBH9N160G图片预览
型号: IXBH9N160G
PDF下载: 下载PDF文件 查看货源
内容描述: 高压BIMOSFET单片双极型晶体管MOS [High Voltage BIMOSFET Monolithic Bipolar MOS Transistor]
分类和应用: 晶体双极型晶体管高压
文件页数/大小: 4 页 / 66 K
品牌: IXYS [ IXYS CORPORATION ]
 浏览型号IXBH9N160G的Datasheet PDF文件第2页浏览型号IXBH9N160G的Datasheet PDF文件第3页浏览型号IXBH9N160G的Datasheet PDF文件第4页  
High Voltage BIMOSFET
TM
Monolithic Bipolar
MOS Transistor
N-Channel, Enhancement Mode
MOSFET compatible
IXBH 9N140G
IXBH 9N160G
V
CES
I
C25
V
CE(sat)
t
fi
TO-247 AD
=
=
=
=
1400/1600 V
9A
4.9 V
typ.
70 ns
C
G
G
C
E
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
C (TAB)
Preliminary Data
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C,
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 10 V, T
VJ
= 125°C, R
G
= 27
V
CE
= 0.8•V
CES
Clamped inductive load, L = 100
µH
T
C
= 25°C
Maximum Ratings
9N140G 9N160G
1400
1400
1600
1600
±20
±30
9
5
10
I
CM
= 12
100
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
Features
• High Voltage BIMOSFET
TM
- replaces high voltage Darlingtons
and series connected MOSFETs
- lower effective R
DS(on)
• MOS Gate turn-on
- drive simplicity
- MOSFET compatible for 10V
turn on gate voltage
• Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
• International standard package
JEDEC TO-247 AD
• Reverse conducting capability
C4
Applications
Flyback converters
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
• CRT deflection
• Lamp ballasts
1.15/10 Nm/lb.in.
6
g
Symbol
Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
Advantages
9N140G
9N160G
1400
1600
3.5
T
J
= 25°C
T
J
= 125°C
0.1
±
500
T
J
= 125°C
4.9
5.6
7
5.5
100
V
V
V
µA
mA
nA
V
V
046
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 0.25 mA, V
GE
= 0 V
= 0.5 mA, V
CE
= V
GE
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
© 2000 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1 -4
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670