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IXER35N120D1 参数 Datasheet PDF下载

IXER35N120D1图片预览
型号: IXER35N120D1
PDF下载: 下载PDF文件 查看货源
内容描述: NPT3 IGBT与二极管 [NPT3 IGBT with Diode]
分类和应用: 二极管双极性晶体管
文件页数/大小: 2 页 / 54 K
品牌: IXYS [ IXYS CORPORATION ]
 浏览型号IXER35N120D1的Datasheet PDF文件第2页  
Advanced Technical Information
NPT
3
IGBT
with Diode
in ISOPLUS 247
TM
IXER 35N120D1
I
C25
V
CES
V
CE(sat) typ.
C
G
= 50 A
= 1200 V
= 2.2 V
ISOPLUS 247
TM
E153432
G
C
E
E
G = Gate
Isolated Backside*
C = Collector
E = Emitter
*Patent pending
IGBT
Symbol
V
CES
V
GES
I
C25
I
C90
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
T
C
= 25°C
T
C
= 90°C
V
GE
=
±
15 V; R
G
= 39
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= 900V; V
GE
=
±
15 V; R
G
= 39
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
1200
±
20
50
32
50
V
CES
10
200
µs
W
V
V
A
A
A
Features
• NPT
3
IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
• HiPerFRED
TM
diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• ISOPLUS 247
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- high reliability
- industry standard outline
Applications
• single switches
• choppers with complementary free
wheeling diodes
• phaselegs, H bridges, three phase
bridges e.g. for
- power supplies, UPS
- AC, DC and SR drives
- induction heating
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.2
2.6
4.5
0.4
200
150
60
700
50
4.2
3.5
2
250
1.2
2.8
6.5
0.4
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
nC
0.6 K/W
K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
R
thJH
I
C
= 35 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 35 A
V
GE
= ±15 V; R
G
= 39
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 30 A
© 2002 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1-2
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
204