HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
, Low Intrinsic R
G
High dV/dt, Low t
rr
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
Weight
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
IXFB50N80Q2
V
DSS
I
D25
R
DS(on)
t
rr
=
=
≤
≤
800V
50A
160mΩ
Ω
300ns
PLUS264
Maximum Ratings
800
800
±
30
±
40
50
200
50
5
20
1135
-55 ... +150
150
-55 ... +150
300
260
10
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
g
Features
Double Metal Process for Low Gate
Resistance
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Switch-Mode and Resonant-Mode
Power Supplies >500kHz Switching
DC-DC Converters
DC Choppers
Pulse Generation
Laser Drivers
V
G
D
Tab
S
G = Gate
S = Source
D = Drain
Tab = Drain
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
= ± 30V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
800
3.0
5.5
V
± 200 nA
50 µA
3 mA
160 mΩ
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2010 IXYS CORPORATION, All Rights Reserved
DS99005D(01/10)
IXYS [ IXYS CORPORATION ]
