PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFB 60N80P
V
DSS
= 800 V
I
D25
=
60 A
R
DS(on)
≤
140 mΩ
Ω
≤
250 ns
t
rr
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
Weight
Test Conditions
T
J
= 25° C to 150° C
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150° C, R
G
= 2
Ω
T
C
= 25° C
Maximum Ratings
800
800
±30
±40
60
150
30
100
5
20
1250
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
°C
N/lb
g
PLUS264
TM
(IXFB)
G
(TAB)
D
S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l
l
l
l
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting force
300
260
30..120/7.5...2.7
10
Advantages
l
l
l
Plus 264
TM
package for clip or spring
Space savings
High power density
Symbol
Test Conditions
(T
J
= 25° C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
800
3.0
5.0
±200
25
3000
140
V
V
nA
µA
µA
m
Ω
V
GS
= 10 V, I
D
= 0.5 I
D25
, Note 1
© 2006 IXYS All rights reserved
DS99560E(02/06)
IXYS [ IXYS CORPORATION ]
