Advance Technical Information
HiPerFET
TM
Power MOSFETs
Q-Class
IXFB 70N60Q2
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
, Low Intrinsic R
g
High dV/dt, Low t
rr
V
DSS
= 600 V
I
D25
= 70 A
R
DS(on)
= 80 mΩ
Ω
t
rr
≤
250 ns
PLUS 264
TM
(IXFB)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
1.6 mm (0.063 in.) from case for 10 s
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum Ratings
600
600
±30
±40
70
280
70
60
5.0
20
890
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
PLUS 264
TM
package for clip or spring
mounting
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
3.0
V
5.0 V
±200
nA
T
J
= 25°C
T
J
= 125°C
50
µA
3 mA
80 mΩ
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±30
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
Note 1
© 2003 IXYS All rights reserved
DS99006(02/03)
IXYS [ IXYS CORPORATION ]
