IXFH 10N90 IXFH 12N90 IXFH 13N90
IXFM 10N90 IXFM 12N90
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
6
12
4200
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
315
90
18
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2
W
(External)
12
51
18
123
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
27
49
50
50
100
50
155
45
80
0.42
0.25
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
Dim. Millimeter
Min. Max.
A
B
C
D
E
F
G
H
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32 5.49
5.4
6.2
1.65 2.13
-
4.5
1.0
1.4
10.8 11.0
4.7
0.4
5.3
0.8
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
TO-247 AD (IXFH) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 • I
D25
, pulse test
Source-Drain Diode
Symbol
I
S
Test Conditions
V
GS
= 0 V
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
10N90
12N90
13N90
10N90
12N90
13N90
10
12
13
40
48
52
1.5
250
400
1
2
10
15
A
A
A
A
A
A
V
ns
ns
mC
mC
A
A
J
K
L
M
N
1.5 2.49
TO-204 AA (IXFM) Outline
I
SM
Repetitive;
pulse width limited by T
JM
V
SD
t
rr
Q
RM
I
RM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
I
F
= I
S
-di/dt = 100 A/ms,
V
R
= 100 V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
Dim.
A
B
C
D
E
F
G
H
J
K
Q
R
Millimeter
Min. Max.
38.61 39.12
19.43 19.94
6.40 9.14
0.97 1.09
1.53 2.92
30.15 BSC
10.67 11.17
5.21 5.71
16.64 17.14
11.18 12.19
3.84 4.19
25.16 25.90
Inches
Min. Max.
1.520 1.540
- 0.785
0.252 0.360
0.038 0.043
0.060 0.115
1.187 BSC
0.420 0.440
0.205 0.225
0.655 0.675
0.440 0.480
0.151 0.165
0.991 1.020
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXYS [ IXYS CORPORATION ]
