HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
V
DSS
IXFH/IXFM 11 N80
IXFH/IXFM 13 N80
I
D25
R
DS(on)
0.95
W
0.80
W
800 V 11 A
800 V 13 A
t
rr
£
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
,
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
11N80
13N80
11N80
13N80
11N80
13N80
Maximum Ratings
800
800
±20
±30
11
13
44
52
11
13
30
5
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
TO-247 AD (IXFH)
(TAB)
TO-204 AA (IXFM)
D
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Features
• International standard packages
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
• High power density
91528F(7/97)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
800
2.0
4.5
±100
T
J
= 25°C
T
J
= 125°C
250
1
0.95
0.80
V
V
nA
mA
mA
W
W
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
11N80
13N80
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1-4
IXYS [ IXYS CORPORATION ]
