HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
V
DSS
IXFH14N80
IXFH15N80
I
D25
R
DS(on)
0.70
W
0.60
W
800 V 14 A
800 V 15 A
t
rr
£
250 ns
Preliminary data
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
,
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
Maximum Ratings
800
800
±20
±30
14N80
15N80
14N80
15N80
14N80
15N80
14
15
56
60
14
15
30
5
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
TO-247 AD
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
300
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
°C
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
•
Low package inductance
- easy to drive and to protect
•
Fast intrinsic Rectifier
•
•
•
•
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10 Nm/lb.in.
6
g
Applications
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DSS
temperature coefficient
V
DS
= V
GS
, I
D
= 4 mA
V
GS(th)
temperature coefficient
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
T
J
= 25°C
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
800
0.096
2.0
-0.214
±100
250
1
0.70
0.60
4.5
V
%/K
V
%/K
nA
mA
mA
W
W
Advantages
•
Easy to mount with 1 screw
•
•
•
•
•
•
•
•
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
14N80
15N80
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
(isolated mounting screw hole)
•
Space savings
•
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
96523B (3/98)
© 2000 IXYS All rights reserved
1-4
IXYS [ IXYS CORPORATION ]
