欢迎访问ic37.com |
会员登录 免费注册
发布采购

IXFH15N80Q 参数 Datasheet PDF下载

IXFH15N80Q图片预览
型号: IXFH15N80Q
PDF下载: 下载PDF文件 查看货源
内容描述: HiPerFET功率MOSFET Q系列 [HiPerFET Power MOSFETs Q-Class]
分类和应用: 晶体晶体管开关脉冲局域网
文件页数/大小: 4 页 / 114 K
品牌: IXYS [ IXYS CORPORATION ]
 浏览型号IXFH15N80Q的Datasheet PDF文件第2页浏览型号IXFH15N80Q的Datasheet PDF文件第3页浏览型号IXFH15N80Q的Datasheet PDF文件第4页  
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
IXFH 15N80Q
IXFT 15N80Q
V
DSS
I
D25
R
DS(on)
=
=
=
800 V
15 A
0.60
W
t
rr
£
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
,
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
Maximum Ratings
800
800
±20
±30
15
60
15
30
1.0
5
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) (IXFT) Case Style
G
W
°C
°C
°C
°C
Features
G = Gate
S = Source
S
D = Drain
TAB = Drain
(TAB)
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-268
300
1.13/10 Nm/lb.in.
6
4
g
g
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25°C
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
800
2.0
4.5
±100
25
1
0.60
V
V
nA
mA
mA
W
IXYS advanced low Q
g
process
International standard packages
Low R
DS (on)
Unclamped Inductive Switching (UIS)
rated
• Fast switching
• Molding epoxies meet UL 94 V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
98514B (7/00)
© 2000 IXYS All rights reserved
1-4