Advanced Technical Information
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g
, High dv/dt
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
TO-264
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
,
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
IXFH20N80Q V
DSS
= 800 V
IXFK20N80Q I
D25
=
20 A
IXFT20N80Q R
DS(on)
= 0.42
W
t
rr
£
250 ns
Maximum Ratings
800
800
±20
±30
20
80
20
45
1.5
5
360
-55 ... +150
150
-55 ... +150
300
TO-247
TO-264
1.13/10
0.9/6
6
4
10
V
V
V
V
A
A
A
mJ
J
V/ns
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
TO-264 AA (IXFK)
W
°C
°C
°C
°C
Nm/lb.in.
Nm/lb.in.
g
g
g
G = Gate
S = Source
G
D
S
D (TAB)
TAB = Drain
Features
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
800
2.5
4.5
±200
T
J
= 25°C
T
J
= 125°C
25
1
0.42
V
V
nA
mA
mA
W
• IXYS advanced low Q
g
process
• International standard packages
• Epoxy meet UL 94 V-0, flammability
classification
• Low R
DS (on)
low Q
g
• Avalanche energy and current rated
• Fast intrinsic rectifier
Advantages
• Easy to mount
• Space savings
• High power density
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
98616 (4/99)
© 2000 IXYS All rights reserved
1-2
IXYS [ IXYS CORPORATION ]
