HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
, High dv/dt
IXFH 21N50Q
IXFT 21N50Q
V
DSS
= 500 V
= 21 A
I
D25
R
DS(on)
= 0.25
Ω
t
rr
≤
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
500
500
±30
±40
21
84
21
30
1.5
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
°C
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
15
280
-55 to +150
150
-55 to +150
(TAB)
G = Gate
D
= Drain
S = Source TAB = Drain
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
300
Features
l
l
1.13/10 Nm/lb.in.
6
4
g
g
IXYS advanced low Q
g
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
DS (on)
Rated for unclamped Inductive load
switching (UIS) rated
Molding epoxies meet UL 94 V-0
flammability classification
l
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
500
2.5
4.5
±100
T
J
= 25°C
T
J
= 125°C
25
1
0.25
V
V
nA
µA
mA
Ω
l
l
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
l
Advantages
l
l
l
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2004 IXYS All rights reserved
98718B(02/04)
IXYS [ IXYS CORPORATION ]
