HiPerFET
Power MOSFETs
TM
V
DSS
IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
I
D25
R
DS(on)
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
500 V 21 A 0.25
Ω
500 V 24 A 0.23
Ω
500 V 26 A 0.20
Ω
t
rr
≤
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
21N50
24N50
26N50
21N50
24N50
26N50
21N50
24N50
26N50
Maximum Ratings
500
500
±20
±30
21
24
26
84
96
104
21
24
26
30
5
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
Nm/lb.in.
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) Case Style
G
S
TO-204 AE (IXFM)
(TAB)
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
D
G = Gate,
S = Source,
D = Drain,
TAB = Drain
G
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10
TO-204 = 18 g, TO-247 = 6 g
Features
• International standard packages
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power surface mountable package
• High power density
91525H (9/99)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
500
2
4
±100
T
J
= 25°C
T
J
= 125°C
200
1
V
V
nA
µA
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
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IXYS [ IXYS CORPORATION ]
