HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt,
Low Gate Charge and Capacitances
IXFH 20N60Q
IXFT 20N60Q
V
DSS
I
D25
R
DS(on)
=
=
=
600
20
0.35
V
A
Ω
t
rr
≤
250ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum Ratings
600
600
±30
±40
20
80
20
30
1.5
15
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
TO-247 AD (IXFH)
(TAB)
TO-268
(IXFT)
Case Style
G
(TAB)
S
D = Drain
TAB = Drain
W
°C
°C
°C
°C
G = Gate
S = Source
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
300
Features
IXYS advanced low gate charge
process
International standard packages
Low gate charge and capacitance
- easier to drive
- faster switching
Low R
DS (on)
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
1.13/10 Nm/lb.in.
6
4
g
g
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
=
250 µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25°C
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
600
2.0
4.5
±100
25
1
0.35
V
V
nA
µA
mA
Ω
Advantages
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2003 IXYS All rights reserved
DS98549C(03/03)
IXYS [ IXYS CORPORATION ]
