HiPerFET
TM
Power MOSFETs
Q-Class
IXFH 32N50Q
IXFT 32N50Q
V
DSS
I
D25
R
DS(on)
500
V
32
A 0.16
Ω
500
V
32
A 0.16
Ω
t
rr
≤
250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
, High dv/dt
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C; pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum Ratings
500
500
±20
±30
32
128
32
45
1500
5
416
-55 ... + 150
150
-55 ... + 150
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
°C
Nm/lb.in.
g
g
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
300
1.13/10
6
4
Features
IXYS advanced low Q
g
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
DS (on)
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
500
2.5
4.5
±100
T
J
= 25°C
T
J
= 125°C
100
1
0.16
V
V
nA
µA
mA
Ω
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250 uA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
© 2004 IXYS All rights reserved
DS98596E(02/04)
IXYS [ IXYS CORPORATION ]
