HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
V
DSS
IXFH/IXFM42N20
IXFH/IXFM/IXFT50N20
IXFH/IXFT58N20
200 V
200 V
200 V
I
D25
R
DS(on)
42 A 60mW
50 A 45mW
58 A 40mW
t
rr
£
200 ns
TO-247 AD (IXFH)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
42N20
50N20
58N20
42N20
50N20
58N20
42N20
50N20
58N20
Maximum Ratings
200
200
±20
±30
42
50
58
168
200
232
42
50
58
30
5
300
-55 ... +150
150
-55 ... +150
V
V
V
V
G
TO-268 (D3) Case Style
(TAB)
A
A
A
A
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
S
(TAB)
TO-204 AE (IXFM)
S
D
G = Gate,
S = Source,
D = Drain,
TAB = Drain
G
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
= 25°C
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
,
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Features
• International standard packages
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power surface mountable package
• High power density
91522H (2/98)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
200
2
4
±100
T
J
= 25°C
T
J
= 125°C
200
1
V
V
nA
mA
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1-4
IXYS [ IXYS CORPORATION ]
