PolarHT
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode, Avalanche
Rated
Preliminary Data Sheet
IXFH 74N20P
IXFV 74N20P
IXFV 74N20PS
V
DSS
I
D25
t
rr
R
DS(on)
=
=
=
≤
200
74
34
200
V
A
mΩ
Ω
ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
F
C
M
d
Weight
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 4
Ω
T
C
= 25°C
Maximum Ratings
200
200
±20
±30
74
200
60
40
1.0
10
480
-55 ... +175
175
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
TO-247 (IXFH)
G
D
S
D (TAB)
PLUS220 (IXFV)
G
W
°C
°C
°C
°C
°C
D
S
D (TAB)
PLUS220SMD (IXFV-PS)
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting Force
Mounting torque
TO-247
PLUS220
(PLUS220)
(TO-247)
300
250
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
6.0
4.0
g
g
G
S
G = Gate
S = Source
D = Drain
TAB = Drain
D (TAB)
Features
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
200
2.5
5.0
±100
25
250
34
V
V
nA
µA
µA
mΩ
Advantages
Easy to mount
Space savings
High power density
DS99209(09/04)
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
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IXYS [ IXYS CORPORATION ]
