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IXFK120N25P 参数 Datasheet PDF下载

IXFK120N25P图片预览
型号: IXFK120N25P
PDF下载: 下载PDF文件 查看货源
内容描述: Polar功率MOSFET HiperFET [Polar Power MOSFET HiPerFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 5 页 / 145 K
品牌: IXYS [ IXYS CORPORATION ]
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Polar
TM
Power MOSFET
HiPerFET
TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrisic Diode
IXFK120N25P
IXFX120N25P
V
DSS
I
D25
R
DS(on)
t
rr
=
=
250V
120A
24mΩ
Ω
200ns
TO-264 (IXFK)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
LRMS
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
Mounting Torque
PLUS247
TO-264
(PLUS247)
(TO-264)
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
Lead Current Limit, RMS
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25°C
Maximum Ratings
250
250
±20
±30
120
75
300
60
2.5
10
700
-55 ... +150
150
-55 ... +150
300
260
20..120/4.5..27
1.13/10
6
10
V
V
V
V
A
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
N/lb.
Nm/lb.in.
g
g
G = Gate
S = Source
D
= Drain
TAB = Drain
(TAB)
G
D
S
(TAB)
PLUS247 (IXFX)
Features
International Standard Packages
Fast Intrinsic Diode
Avalanche Rated
Low Package Inductance
Advantages
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
19
Characteristic Values
Min.
Typ.
Max.
250
2.5
5.0
V
V
Easy to Mount
Space Savings
High Power Density
Applications
Switched-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
±200
nA
25
μA
250
μA
24 mΩ
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2009 IXYS CORPORATION, All Rights Reserved
DS99379F(5/09)