Polar
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
IXFK 200N10P
IXFX 200N10P
V
DSS
= 100 V
I
D25
= 200 A
R
DS(on)
≤
7.5 mΩ
Ω
t
rr
≤
150 ns
Maximum Ratings
100
100
±20
±30
200
75
400
60
100
4
10
830
-55 ... +175
175
-55 ... +150
300
260
20
0.9/6
120/45 26
10
6
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in
Nm/lb.in
g
g
TO-264 (IXFK)
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
External lead current limit
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/μs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 4
Ω
T
C
= 25°C
G
D
S
D (TAB)
PLUS247 (IXFX)
D
S
TAB
G = Gate
S = Source
D = Drain
Tab = Drain
1.6mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque TO-264
Mounting force PLUS247
TO-264
PLUS247
Features
l
l
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250
μA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±20
V, V
GS
= 0 V
V
DS
= V
DSS
T
J
= 150°C
T
J
= 175°C
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
V
GS
= 15 V, I
D
= 400A
Pulse test, t
≤
300
μs,
duty cycle d
≤
2 %
Characteristic Values
Min. Typ.
Max.
100
3.0
5.0
±100
25
500
2.5
7.5
5.5
V
V
nA
μA
μA
mA
mΩ
mΩ
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
l
Easy to mount
Space savings
High power density
© 2006 IXYS All rights reserved
DS99590E(03/06)
IXYS [ IXYS CORPORATION ]
