HiPerFET
TM
Power MOSFETs
Q-Class
IXFK 30N100Q2
IXFX 30N100Q2
V
DSS
= 1000 V
=
30 A
I
D25
R
DS(on)
= 0.40
Ω
t
rr
≤
300 ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Low intrinsic R
g
, low t
rr
Preliminary Data Sheet
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-264
PLUS-247
TO-264
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum Ratings
1000
1000
±30
±40
30
120
30
60
4.0
20
735
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
G = Gate
S = Source
PLUS 247
TM
(IXFX)
G
D (TAB)
D
TO-264 AA (IXFK)
G
D
S
D (TAB)
D = Drain
TAB = Drain
0.9/6 Nm/lb.in.
6
10
g
g
Features
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1000
2.5
5.0
±200
T
J
= 25°C
T
J
= 125°C
50
2
0.40
V
V
nA
µA
mA
Ω
Advantages
Easy to mount
Space savings
High power density
Double metal process for low gate
resistance
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2004 IXYS All rights reserved
DS99160(4/04)
IXYS [ IXYS CORPORATION ]
