HiPerFET
TM
Power MOSFETs
Single MOSFET Die
Avalanche Rated
Preliminary data sheet
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
PLUS 247
TO-264
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
IXFK 34N80
IXFX 34N80
V
DSS
I
D25
R
DS(on)
= 800 V
=
34 A
= 0.24
W
t
rr
£
250 ns
Maximum Ratings
800
800
±20
±30
34
136
36
64
3
5
560
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
PLUS 247
TM
(IXFX)
G
(TAB)
D
TO-264 AA (IXFK)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
0.9/6 Nm/lb.in.
6
10
g
g
Features
• International standard packages
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
Advantages
• PLUS 247
TM
package for clip or spring
mounting
• Space savings
• High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
800
3.0
V
5.0 V
±200
nA
T
J
= 25°C
T
J
= 125°C
100
mA
2 mA
0.24
W
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
Note 1
IXYS reserves the right to change limits, test conditions, and dimensions.
98560B (6/99)
© 2000 IXYS All rights reserved
1-2
IXYS [ IXYS CORPORATION ]
