PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 36N60P
IXFK 36N60P
IXFT 36N60P
V
DSS
= 600 V
I
D25
= 36 A
R
DS(on)
≤
190 mΩ
Ω
t
rr
≤
200 ns
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25° C to 150° C
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150° C, R
G
= 4
Ω
T
C
= 25° C
Maximum Ratings
600
600
±30
±40
36
80
36
50
1.5
20
650
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
TO-247 (IXFH)
G
D
S
D (TAB)
TO-268 (IXFT) Case Style
G
S
D (TAB)
TO-264 AA (IXFK)
Mounting torque (TO-247 & TO-264)
TO-247
TO-268
TO-264
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
1.13/10 Nm/lb.in.
6
5
10
300
260
g
g
g
°
C
°
C
G
D
S
(TAB)
T
L
T
SOLD
G = Gate
S = Source
Features
l
l
l
D = Drain
Tab = Drain
Symbol
Test Conditions
(T
J
= 25° C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
600
3.0
5.0
±200
100
1000
190
V
V
nA
µA
µA
m
Ω
l
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
l
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
Easy to mount
Space savings
High power density
DS99383E(02/06)
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IXYS [ IXYS CORPORATION ]
