HiPerFET
TM
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated,
Low Qg
High dV/dt,
Low t
rr
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
V
DSS
I
D25
R
DS(on)
IXFK/IXFX 48N50Q 500
V 48 A 100 mΩ
Ω
Ω
IXFK/IXFX
44N50Q 500
V 44 A 120 mΩ
t
rr
≤
250 ns
PLUS 247
TM
(IXFX)
Maximum Ratings
G
(TAB)
D
500
500
±20
±30
44N50
48N50
44N50
48N50
44
48
176
192
48
60
2.5
15
500
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
Nm/lb.in.
6
10
g
g
TO-264 AA (IXFK)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
PLUS 247
TO-264
Test Conditions
0.4/6
300
Features
IXYS advanced low Q
g
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
DS (on)
Rated for unclamped Inductive load
switching (UIS) rated
Molding epoxies meet UL 94 V-0
flammability classification
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
Symbol
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
500
2.0
V
4.0 V
±100
nA
T
J
= 125°C
44N50
48N50
100
µA
2 mA
120 mΩ
100 mΩ
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250uA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
Note 1
© 2003 IXYS All rights reserved
DS98612D(08/03)
IXYS [ IXYS CORPORATION ]
