PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK 80N50P
IXFX 80N50P
V
DSS
I
D25
t
rr
R
DS(on)
= 500 V
= 80 A
≤
65 mΩ
Ω
≤
200 ns
Symbol
V
DSS
V
DGR
V
GSM
V
GSM
I
D25
I
L
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25° C to 150° C
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Transient
Continuous
T
C
= 25° C
Lead Current Limit, RMS
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150° C, R
G
= 2
Ω
T
C
= 25° C
Maximum Ratings
500
500
±
40
±
30
80
75
200
80
80
3.5
20
1040
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°
C
°
C
N/lb
TO-264 (IXFK)
G
D
D (TAB)
S
PLUS247 (IXFX)
D
S
D (TAB)
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting force (PLUS247)
Mounting torque (TO-264)
TO-264
PLUS247
300
260
20..120/4.5..25
G = Gate
D = Drain
S = Source
Tab = Collector
1.13/10 Nm/lb.in.
10
6
g
g
Features
l
l
Symbol
Test Conditions
(T
J
= 25° C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 500
µA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±
30 V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
500
3.0
5.0
±
200
25
2
65
V
V
nA
µA
mA
mΩ
l
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
l
Easy to mount
Space savings
High power density
© 2006 IXYS All rights reserved
DS99437E(03/06)
IXYS [ IXYS CORPORATION ]
