HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
IXFN 130N30
D
V
DSS
= 300 V
I
D25
= 130 A
R
DS(on)
= 22
mΩ
Ω
t
rr
< 250 ns
G
S
S
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
Terminal (current limit)
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum Ratings
300
300
±20
±30
130
100
520
100
85
4
5
700
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
W
°C
°C
°C
V~
V~
•
International standard packages
•
miniBLOC, with Aluminium nitride
isolation
•
Low R
DS (on)
HDMOS
TM
process
•
Rugged polysilicon gate cell structure
•
Unclamped Inductive Switching (UIS)
rated
•
Low package inductance
•
Fast intrinsic Rectifier
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
2500
3000
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
300
2
4
±200
T
J
= 25°C
T
J
= 125°C
100
2
V
V
nA
µA
mA
•
DC-DC converters
•
Battery chargers
•
Switched-mode and resonant-mode
power supplies
•
DC choppers
•
Temperature and lighting controls
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
Advantages
22
m
Ω
•
Easy to mount
•
Space savings
•
High power density
© 2003 IXYS All rights reserved
DS98531F(01/03)
IXYS [ IXYS CORPORATION ]
