HiPerFET
TM
Power MOSFET
Single MOSFET Die
Preliminary data sheet
IXFN 180N10
V
DSS
I
D25
R
DS(on)
= 100 V
= 180 A
Ω
=
8 mΩ
t
rr
≤
250 ns
Symbol Test Conditions
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
Terminal (current limit)
T
C
= 25°C; Note 1
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum Ratings
100
100
±20
±30
180
100
720
180
60
3
5
600
-55 ... +150
150
-55 ... +150
300
2500
3000
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
V~
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•
International standard package
•
Encapsulating epoxy meets
UL 94 V-0, flammability classification
•
miniBLOC with Aluminium nitride
•
•
•
•
•
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
•
•
•
•
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±20V,
V
GS
= 0V
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10V, I
D
= 0.5 • I
D25
Note 2
Characteristic Values
Min.
Typ.
Max.
100
2
4
±100
T
J
= 25°C
T
J
= 125°C
100
2
8
V
V
nA
µA
mA
m
Ω
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
•
DC choppers
•
Temperature and lighting controls
•
Low voltage relays
Advantages
•
Easy to mount
•
Space savings
•
High power density
© 1999 IXYS All rights reserved
98546B (8/99)
IXYS [ IXYS CORPORATION ]
