欢迎访问ic37.com |
会员登录 免费注册
发布采购

IXFN180N07 参数 Datasheet PDF下载

IXFN180N07图片预览
型号: IXFN180N07
PDF下载: 下载PDF文件 查看货源
内容描述: HiPerFET功率MOSFET [HiPerFET Power MOSFETs]
分类和应用:
文件页数/大小: 4 页 / 191 K
品牌: IXYS [ IXYS CORPORATION ]
 浏览型号IXFN180N07的Datasheet PDF文件第2页浏览型号IXFN180N07的Datasheet PDF文件第3页浏览型号IXFN180N07的Datasheet PDF文件第4页  
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
V
DSS
IXFN 200 N06
IXFN 180 N07
IXFN 200 N07
60 V
70 V
70 V
I
D25
200 A
180 A
200 A
t
rr
£
250 ns
R
DS(on)
6 mW
7 mW
6 mW
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C; Chip capability
Terminal current limit
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
,
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
200N06/200N07
180N07
N07
N06
N07
N06
Maximum Ratings
70
60
70
60
±20
±30
200
180
100
600
100
30
2
5
520
-55 ... +150
150
-55 ... +150
V
V
V
V
V
V
A
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
V~
V~
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard packages
• miniBLOC with Aluminium nitride
isolation
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
50/60 Hz, RMS
I
ISOL
£
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t=1s
2500
3000
1.5/13Nm/lb.in.
1.5/13Nm/lb.in.
30
g
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
N06
N07
60
70
2
V
V
V
nA
mA
mA
V
DSS
V
GS (th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
T
J
= 125°C
V
GS
= 0 V
4
±200
400
2
T
J
= 25°C
Advantages
• Easy to mount
• Space savings
• High power density
97533A (9/99)
V
GS
= 10 V, I
D
= 0.5 • I
D25
200N06/200N07
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
180N07
6 mW
7 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1-4