HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated,High dv/dt, Low t
rr
Fast Intrinsic Diode
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
D25
I
DM
I
AR
I
AR
E
AR
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
1.6mm (0.062 in.) from case for 10s
50/60 Hz, RMS
I
ISOL
≤
1mA
Mounting torque
Terminal connection torque
t = 1min
t = 1s
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
T
C
T
C
T
C
T
C
T
C
T
C
T
C
= 25°C
= 25°C, pulse width limited by T
JM
= 25°C
= 25°C, pulse width limited by T
JM
= 25°C
= 25°C
= 25°C
= 25°C
V
DSS
I
D25
R
DS(on)
IXFN25N90
IXFN26N90
900V
900V
25A
26A
330mΩ
Ω
300mΩ
Ω
Maximum Ratings
900
900
±
20
±
30
25N90
25N90
26N90
26N90
25N90
26N90
25
100
26
104
25
26
64
3
5
600
-55 ... +150
150
-55 ... +150
300
2500
3000
1.5/13
1.3/11.5
30
V
V
V
V
A
A
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
miniBLOC, SOT-227
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Features
International standard package
miniBLOC, with Aluminium nitride
isolation
Low R
DS(ON)
HDMOS
TM
process
Avalanche Rated
Low package inductance
Fast intrinsic diode
Advantages
Low gate drive requirement
High power density
Applications:
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified)
Min. Typ. Max.
900
3.0
5.0
±
200
T
J
= 125°C
25N90
26N90
V
V
nA
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±
20V, V
DS
= 0V
V
DS
= 0.8 • V
DSS
V
GS
= 0V
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Battery chargers
DC choppers
Temperature & lighting controls
100
μA
2 mA
330 mΩ
300 mΩ
DS97526F(12/08)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2008 IXYS CORPORATION, All rights reserved
IXYS [ IXYS CORPORATION ]
