HiPerFET
TM
Power
MOSFETs Single Die
MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
L(RMS)
I
DM
I
A
E
AS
dV/dt
P
d
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
50/60 Hz, RMS
I
ISOL
≤
1mA
t = 1min
t = 1s
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C, Chip capability
External Lead Current Limit
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
IXFN280N085
V
DSS
= 85V
= 280A
Ω
R
DS(on)
≤
4.4mΩ
I
D25
Maximum Ratings
85
85
±20
±30
280
200
1120
200
4
5
700
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
V
V
V
V
A
A
A
A
J
V/ns
W
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•
International standard package
•
miniBLOC, with Aluminium nitride
isolation
•
Low R
DS(on)
HDMOS
TM
process
•
Rugged polysilicon gate cell structure
•
Avalanche rated
Mounting torque
Terminal connection torque
•
Guaranteed FBSOA
•
Low package inductance
•
Fast intrinsic Rectifier
Advantages
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min.
Typ.
Max.
85
2.0
4.0
±200
T
J
= 125°C
100
2
4.4
V
V
nA
μA
mA
mΩ
•
Easy to mount
•
Space savings
•
High power density
Applications
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
•
DC-DC converters
•
Battery chargers
•
Switched-mode and resonant-mode
power supplies
•
DC choppers
•
Temperature and lighting controls
V
GS
= 10V, I
D
= 100A, Note 1
© 2008 IXYS Corporation, All rights reserved
DS98747B(12/08)
IXYS [ IXYS CORPORATION ]
