PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
IXFN 48N60P
V
DSS
= 600 V
I
D25
= 40 A
R
DS(on)
≤
140 mΩ
Ω
t
rr
≤
200 ns
Maximum Ratings
600
600
±30
±40
40
110
48
70
2.0
10
625
-55 ... +150
150
-55 ... +150
300
2500
3000
V
V
V
G
miniBLOC, SOT-227 B (IXFN)
E153432
S
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
V~
Features
•
International standard package
•
Encapsulating epoxy meets
G = Gate
S = Source
D = Drain
D
S
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/μs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
t = 1 min
I
ISOL
≤
1 mA
t=1s
Mounting torque
Terminal connection torque
1.5 / 13 Nm/lb.in.
1.5 / 13 Nm/lb.in.
30
g
UL 94 V-0, flammability classification
•
miniBLOC with Aluminium nitride
isolation
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
μA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
600
3.0
5.5
±200
25
1000
140
V
V
nA
μA
μA
mΩ
Advantages
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 4 A
Pulse test, t
≤
300
μs,
duty cycle d
≤
2 %
© 2006 IXYS All rights reserved
DS99337E(03/06)
IXYS [ IXYS CORPORATION ]
