Advance Technical Information
HiPerRF
TM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g,
Low Intrinsic R
g
High dV/dt,
Low t
rr
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
J
V
ISOL
M
d
Weight
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
IXFN 55N50F
V
DSS
I
D25
R
DS(on)
=
=
=
500 V
55 A
Ω
85 mΩ
D
t
rr
≤
250 ns
G
S
S
Maximum Ratings
500
500
±20
±30
55
220
55
60
3.0
5
600
-55 ... +150
150
-55 ... +150
-
2500
3000
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
V~
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Features
l
RF capable Mosfets
l
Rugged polysilicon gate cell structure
l
Double metal process for low gate
resistance
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic rectifier
Applications
l
DC-DC converters
l
Switched-mode and resonant-mode
power supplies, >500kHz switching
l
DC choppers
l
Pulse generation
l
Laser drivers
Advantages
l
Easy to mount
l
Space savings
l
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
500
3.0
5.5
±200
T
J
= 25°C
T
J
= 125°C
100
3
85
V
V
nA
µA
mA
mΩ
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
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98854 (8/01)
IXYS [ IXYS CORPORATION ]
