PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN 64N60P
V
DSS
I
D25
R
DS(on)
t
rr
=
=
≤
≤
600
V
50
A
96 m
Ω
200 ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt £ 100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum Ratings
600
600
± 30
± 40
50
150
64
80
3.5
20
700
-55 ... +150
150
-55 ... +150
300
2500
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Mounting torque
Terminal torque
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
30
g
Features
•
International standard package
•
Encapsulating epoxy meets
UL 94 V-0, flammability classification
•
miniBLOC with Aluminium nitride
isolation
•
Low R
DS (on)
HDMOS
TM
process
•
Rugged polysilicon gate cell structure
•
Unclamped Inductive Switching (UIS)
rated
•
Low package inductance
•
Fast intrinsic Rectifier
Applications
•
DC-DC converters
•
Synchronous rectification
•
Battery chargers
•
Switched-mode and resonant-mode
power supplies
•
DC choppers
•
Temperature and lighting controls
•
Low voltage relays
Advantages
•
Easy to mount
•
Space savings
•
High power density
Symbol
Test Conditions
(T
J
= 25° C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
600
3.0
5.0
±200
25
1000
96
V
V
nA
µA
µA
m
Ω
V
GS
= 10 V, I
D
= 0.5 I
D25
, Note 1
© 2006 IXYS All rights reserved
DS99443E(01/06)
IXYS [ IXYS CORPORATION ]
