HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
, High dv/dt
Preliminary Data Sheet
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
Mounting torque (TO-220)
TO-220
TO-263
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
,
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
IXFA 4N100Q
IXFP 4N100Q
V
DSS
=1000 V
=
4 A
I
D25
R
DS(on)
= 3.0
W
t
rr
£
250 ns
Maximum Ratings
1000
1000
±20
±30
4
16
4
20
700
5
150
-55 to +150
150
-55 to +150
300
1.13/10
4
2
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
°C
Nm/lb.in.
TO-220 (IXFP)
D (TAB)
G
DS
TO-263 (IXFA)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
g
g
• IXYS advanced low Q
g
process
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low R
DS (on)
• Rated for unclamped Inductive load
Switching (UIS)
• Molding epoxies meet UL 94 V-0
flammability classification
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
1000
3.0
5.0
±100
T
J
= 25°C
T
J
= 125°C
50
1
3.0
V
V
nA
mA
mA
W
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 1.5 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
Advantages
• Easy to mount
• Space savings
• High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
98705 (02/04/00)
© 2000 IXYS All rights reserved
1-4