Polar
TM
Power MOSFET
HiPerFET
TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrisic Diode
IXFK64N50P
IXFX64N50P
V
DSS
I
D25
R
DS(on)
t
rr
=
=
≤
≤
500V
64A
85mΩ
Ω
200ns
TO-264 (IXFK)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Maximum Ratings
500
500
±30
±40
64
150
64
2.5
20
830
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
N/lb.
Nm/lb.in.
g
g
Features
•
•
•
•
•
G
D
S
(TAB)
PLUS247 (IXFX)
(TAB)
G = Gate
S = Source
D
= Drain
TAB = Drain
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
Mounting Torque
PLUS247
TO-264
(PLUS247)
(TO-264)
300
260
20..120/4.5..27
1.13/10
6
10
International Standard Packages
Fast Intrinsic Diode
Avalanche Rated
Low R
DS(ON)
and Q
G
Low Package Inductance
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min. Typ. Max.
500
3.0
5.5
V
V
±200
nA
25
μA
1 mA
85 mΩ
•
DC-DC Coverters
•
Battery Chargers
•
Switched-Mode and Resonant-Mode
Power Supplies
•
DC Choppers
•
AC and DC Motor Drives
•
Uninterrupted Power Supplies
•
High Speed Power Switching
Applications
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2009 IXYS CORPORATION, All Rights Reserved
DS99348F(5/09)
IXYS [ IXYS CORPORATION ]
