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IXGA8N100 参数 Datasheet PDF下载

IXGA8N100图片预览
型号: IXGA8N100
PDF下载: 下载PDF文件 查看货源
内容描述: [IXGA8N100]
分类和应用:
文件页数/大小: 2 页 / 105 K
品牌: IXYS [ IXYS CORPORATION ]
 浏览型号IXGA8N100的Datasheet PDF文件第1页  
IXGA 8N100
IXGP 8N100
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
g
fs
I
C
= I
C90
V
CE
= 10 V
Pulse test, t
300
µs,
duty cycle
2 %
I
C(on)
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
TO-220
Inductive load, T
J
= 25°C
°
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 800 V, R
G
= R
off
= 120
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125°C
°
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 800 V, R
G
= R
off
= 120
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
V
GE
= 10 V, V
CE
= 10V
40
595
34
10
22.5
4.8
8.5
15
30
600
390
2.3
15
30
0.5
800
630
3.7
2.3
0.5
1000
900
5.0
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
TO-220 AB (IXGP) Outline
K/W
K/W
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min.
Max.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Inches
Min. Max.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
Characteristic Values
Min. Typ. Max.
4
7.6
S
TO-263 AA (IXGA) Outline
Dim.
Min. Recommended Footprint
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Millimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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