IXGH 17N100U1
IXGH 17N100AU1
Fig.7 Gate Charge
Fig.8 Turn-Off Safe Operating Area
15
13
11
V
CE
= 800
I
C
= 17A
I
G
= 10mA
100
10
I
C
- Amperes
T
J
= 125°C
dV/dt < 3V/ns
V
GE
- Volts
9
7
5
3
1
1
0.1
0.01
0
10 20 30 40 50 60 70 80 90 100
0
200
400
600
800
1000
Gate Charge - (nC)
V
CE
- Volts
Fig.9 Capacitance Curves
2000
f = 1MHz
1750
Capacitance - pF
1500
1250
1000
750
500
250
0
0
5
10
15
20
25
C
res
C
oes
C
ies
17N100g2.JNB
V
CE
- Volts
Fig.10 Transient Thermal Impedance
1
D=0.5
D=0.2
Z
thjc
(K/W)
D=0.1
0.1
D=0.05
D=0.02
D=0.01
Single Pulse
D = Duty Cycle
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS [ IXYS CORPORATION ]
