High Voltage IGBT
w/ Diode
IXGH28N120BD1
IXGT28N120BD1
V
CES
=
I
C25
=
V
CE(sat)
≤
t
fi(typ)
=
1200V
50A
3.5V
170ns
TO-247AD (IXGH)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C100
I
F90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1MΩ
Continuous
Transient
T
C
T
C
T
C
T
C
= 25°C ( Chip Capability )
= 100°C
= 90°C
= 25°C, 1ms
Maximum Ratings
1200
1200
±20
±30
50
28
10
150
I
CM
= 120
0.8
•
V
CES
250
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
V
V
V
V
A
A
A
A
A
G = Gate
E = Emitter
Features
International Standard Packages
JEDEC TO-247AD & TO-268
IGBT and Anti-Parallel FRED for
Resonant Power Supplies
- Induction Heating
- Rice Cookers
MOS Gate Turn-On
Fast Recovery Expitaxial Diode (FRED)
- Soft Recovery with Low I
RM
Advantages
G
C
E
(TAB)
TO-268 (IXGT)
G
E
C (TAB)
V
GE
= 15V, T
J
= 125°C, R
G
= 5Ω
Clamped Inductive Load
T
C
= 25°C
C = Collector
TAB = Collector
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
Mounting Torque (TO-247)
TO-247
TO-286
300
260
1.13/10
6
4
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250μA, V
CE
= V
GE
T
J
= 125°C, Note1
V
CE
= 0V, V
GE
= ±20V
I
C
= 28A, V
GE
= 15V, Note 2
T
J
= 125°C
V
CE
= V
CES
, V
GE
= 0V
Characteristic Values
Min.
Typ.
Max.
2.5
5.0
50
250
±100
2.9
2.8
3.5
V
μA
μA
nA
V
V
Saves Space (Two Devices in One
Package)
Easy to Mount with 1 Screw
(Isolated Mounting Screw Hole)
Reduces Assembly Time and Cost
Applications
•
Switch-Mode and Resonant-Mode
•
•
•
•
Power Supplies
Uninterruptible Power Supplies (UPS)
DC Choppers
AC Motor Speed Drives
DC Servo and Robot Drives
© 2009 IXYS CORPORATION, All Rights Reserved
DS98988G(08/09)
IXYS [ IXYS CORPORATION ]
