HiPerFAST
TM
IGBT
IXGH32N60B
V
CES
I
C25
V
CE(sat)
t
fi
=
=
=
=
600 V
60 A
2.5 V
80 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 33
W
Clamped inductive load, L = 100
mH
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
60
32
120
I
CM
= 64
@ 0.8 V
CES
200
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
TO-247 AD
C (TAB)
G
C
E
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
Features
• International standard package
JEDEC TO-247 AD
• High current handling capability
• Newest generation HDMOS
TM
process
• MOS Gate turn-on
- drive simplicity
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-247 AD
6
g
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25°C
T
J
= 125°C
V
V
mA
mA
nA
V
•
•
•
•
•
•
PFC circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
mA,
V
GE
= 0 V
= 250
mA,
V
CE
= V
GE
5
200
1
±100
2.5
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
Advantages
• High power density
• Very fast switching speeds for high
frequency applications
IXYS reserves the right to change limits, test conditions, and dimensions.
95566B (7/00)
© 2000 IXYS All rights reserved
1-2
IXYS [ IXYS CORPORATION ]
