欢迎访问ic37.com |
会员登录 免费注册
发布采购

IXGH35N120B 参数 Datasheet PDF下载

IXGH35N120B图片预览
型号: IXGH35N120B
PDF下载: 下载PDF文件 查看货源
内容描述: HiPerFAST IGBT [HiPerFAST IGBT]
分类和应用: 双极性晶体管
文件页数/大小: 2 页 / 57 K
品牌: IXYS [ IXYS CORPORATION ]
 浏览型号IXGH35N120B的Datasheet PDF文件第2页  
Advance Technical Information
HiPerFAST
TM
IGBT
IXGH 35N120B
IXGT 35N120B
V
CES
= 1200 V
=
70 A
I
C2
V
CE(sat)
=
3.3 V
t
fi(typ)
= 160 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 5
W
Clamped inductive load
T
C
= 25°C
Maximum Ratings
1200
1200
±20
±30
70
35
140
I
CM
= 90
@ 0.8 V
CES
300
-55 ... +150
150
-55 ... +150
300
260
V
V
V
V
A
A
A
A
TO-268
(IXGT)
G
E
C (TAB)
TO-247 AD (IXGH)
G
C (TAB)
C
E
W
°C
°C
°C
°C
°C
Features
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
M
d
Weight
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
• International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
• Low switching losses, low V
(sat)
• MOS Gate turn-on
- drive simplicity
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1200
2.5
T
J
= 25°C
T
J
= 125°C
V
V
mA
mA
nA
V
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 1 mA, V
GE
= 0 V
= 750
mA,
V
CE
= V
GE
5
250
5
±100
3.3
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
Advantages
• High power density
• Suitable for surface mounting
• Easy to mount with 1 screw,
(isolated mounting screw hole)
T
J
= 125°C
2.7
IXYS reserves the right to change limits, test conditions, and dimensions.
98665 (11/99)
© 2000 IXYS All rights reserved
1-2